5th FORUM ON NEW MATERIALS PART C Proceedings of the 5th by Edited by Pietro VINCENZINI World Academy of Ceramics and

By Edited by Pietro VINCENZINI World Academy of Ceramics and National Research Council, Italy Co-edited by Kunihito KOUMOTO, Nagoya University, Japan Nicola ROMEO, University of Parma,

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Measurements of the electrical conductivity  and the Seebeck coefficient S were performed in the temperature range of 300–900 K. Hall measurements were conducted at room temperature by applying an external magnetic field of 1 T by a van der Pauw’s method. The Hall carrier concentration n was determined from the Hall coefficient RH using the relation RH =1/en, where e is the electron charge. The Hall mobility  was determined from the electrical conductivity  and the Hall coefficient RH using the relation = H.

Nolas, V. Fessatidis, T. H. Metcalf and G. A. Slack: Phys. Rev. Lett. 82 (1999) 779-782. G. Nolas, J. L. Cohn, G. A. Slack and S. B. Schujman: Appl. Phys. Lett. 73 (1998) 178-180. B. Eisenmann, H. Schäfer, and R. Zagler: J. Less-Comm. Metals, 118 (1986) 43-55. Y. Mudryk, P. Rogl, C. Paul, S. Berger, E. Bauer, G. Hilscher, C. Godart, and H. Noël: J. : Condens. Matter, 14 (2002) 7991-8004. H. Anno, H. Fukushima, K. Koga, K. Okita and K. Matsubara: IEEE Proc. 25th. Int. Conf. 36-37. C. L. Condron, S.

3. Based on the rigid band model, the Fermi level can be shifted from the bottom of pseudogap to a conduction-band having a sharply rising density of state by electron doping in the Fe2VAl system [6]. Then S increases according to Mott’s theory [13], which suggests that the value of S is proportional to the slope of the density of state at Fermi level. For the Sb-substituted Fe2VAl system, electrons can be injected because the number of valence electrons of Sb is larger than that of Al. Consequently, the rigid band-like shift of the Fermi level by the electron injection resulting from the Sb substitution can contribute to the enhancement of the negative S value.

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